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| product specification www.jmnic.com silicon pnp power transistors 2n5743 2N5744 description ? with to-66 package ? low collector-emitter saturation voltage ? fast switching speed applications ? for general?purpose switching and power amplifier applications. pinning pin description 1 base 2 emitter 3 collector fig.1 simplified outline (to-66) and symbo l absolute maximum ratings(ta= ?? ) symbol parameter conditions value unit 2n5743 60 v cbo collector-base voltage 2N5744 open emitter 100 v 2n5743 60 v ceo collector-emitter voltage 2N5744 open base 100 v v ebo emitter-base voltage open collector 5 v i c collector current 20 a p c collector power dissipation t c =100 ?? 25 w t j junction temperature 150 ?? t stg storage temperature -65~200 ?? thermal characteristics symbol parameter value unit r th j-c thermal resistance junction to case 0.875 ?? /w jmnic
product specification www.jmnic.com jm nic silicon pnp power transistors 2n5743 2N5744 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit 2n5743 60 v ceo collector-emitter sustaining voltage 2N5744 i c =0.2a ;i b =0 100 v v cesat-1 collector-emitter saturation voltage i c =10a; i b =1a 1.0 v v cesat-2 collector-emitter saturation voltage i c =20a ;i b =4a 3.0 v v besat base-emitter saturation voltage i c =10a; i b =1a 1.8 v v be base-emitter on voltage i c =10a ; v ce =5v 1.5 v i cbo collector cut-off current v cb =rated v cbo ; i e =0 0.1 ma i cex collector cut-off current v ce = rated v ceo ; v be(off) =1.5v t c =150 ?? 0.5 5.0 ma i ebo emitter cut-off current v eb =5v; i c =0 1.0 ma h fe-1 dc current gain i c =10a ; v ce =5v 20 80 h fe-2 dc current gain i c =20a ; v ce =5v 10 f t transition frequency i c =1a ; v ce =10v 10 mhz product specification www.jmnic.com jm nic silicon pnp power transistors 2n5743 2N5744 package outline fig.2 outline dimensions (unindicated tolerance: ? 0.1mm) |
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